Lista produktów
| Porównać | Obraz | Część # | Producent | Opis | Inwentarz | Model ECAD | RoHS | Cecha FET | Spust do źródła napięcia (Vdss) | Prąd - Ciągły Odpływ (Id) @ 25 ° C | RDS (Max) @ ID, Vgs | VGS (th) (Max) @ Id | Opłata bramkowa (Qg) (maksymalna) @ Vgs | Pojemność wejściowa (Ciss) (maks.) @ Vds | Napięcie - Test | Napięcie Napędu (Max Rds On, Min Rds On) | Vgs (maks.) | Rodzaj FET | Inne nazwy | Podstawowy numer produktu | Pakiet | Seria | Numer części producenta | Opis | Poziom czułości na wilgoć (MSL) | Standardowy czas oczekiwania producenta | Rozszerzony opis | Stan RoHS | Technologia | temperatura robocza | Rodzaj mocowania | Package / Case | Polaryzacja | Dostawca urządzeń Pakiet | Napięcie - Podział | Strata mocy (max) | Stosunek pojemności | Ilość |
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FCH104N60F | onsemi | MOSFET N-CH 600V 37A TO247-3 | Na stanie9132 pcs | - | 600 V | 37A (Tc) | 104mOhm @ 18.5A, 10V | 5V @ 250µA | 139 nC @ 10 V | 5950 pF @ 100 V | - | 10V | ±20V | N-Channel | - | FCH104 | Tube | HiPerFET™, Polar™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247-3 | - | 357W (Tc) | - | ||||
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FQP65N06 | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 6 | Na stanie5150 pcs | - | 60 V | 65A (Tc) | 16mOhm @ 32.5A, 10V | 4V @ 250µA | 65 nC @ 10 V | 2410 pF @ 25 V | - | 10V | ±25V | N-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 150W (Tc) | - | ||||
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FDS6679AZ | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 1 | Na stanie3630 pcs | - | 30 V | 13A (Ta) | 9.3mOhm @ 13A, 10V | 3V @ 250µA | 96 nC @ 10 V | 3845 pF @ 15 V | - | 4.5V, 10V | ±25V | P-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta) | - | ||||
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FQP4N20L | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 3 | Na stanie89720 pcs | - | 200 V | 3.8A (Tc) | 1.35Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2 nC @ 5 V | 310 pF @ 25 V | - | 5V, 10V | ±20V | N-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 45W (Tc) | - | ||||
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TK25A20D,S5X | Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | Na stanie57530 pcs | - | 200 V | 25A (Ta) | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | 2550 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | - | TO-220SIS | - | 45W (Tc) | - | ||||
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BSL211SPL6327 | Infineon Technologies | P-CHANNEL POWER MOSFET | Na stanie4530 pcs | - | 20 V | 4.7A (Ta) | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4 nC @ 4.5 V | 654 pF @ 15 V | - | 2.5V, 4.5V | ±12V | P-Channel | - | - | Bulk | OptiMOS™-P | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | PG-TSOP6-6-6 | - | 2W (Ta) | - | ||||
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HUF75339G3 | onsemi | MOSFET N-CH 55V 75A TO247-3 | Na stanie4200 pcs | - | 55 V | 75A (Tc) | 12mOhm @ 75A, 10V | 4V @ 250µA | 130 nC @ 20 V | 2000 pF @ 25 V | - | 10V | ±20V | N-Channel | - | HUF75 | Tube | UltraFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | - | TO-247-3 | - | 200W (Tc) | - | ||||
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FDMC0310AS | onsemi | MOSFET N-CH 30V 19A/21A 8MLP | Na stanie4460 pcs | - | 30 V | 19A (Ta), 21A (Tc) | 4.4mOhm @ 19A, 10V | 3V @ 1mA | 52 nC @ 10 V | 3165 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | FDMC0310 | Tape & Reel (TR) | PowerTrench®, SyncFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 8-MLP (3.3x3.3) | - | 2.4W (Ta), 36W (Tc) | - | ||||
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IXFN102N30P | IXYS | MOSFET N-CH 300V 88A SOT227B | Na stanie1389 pcs | - | 300 V | 88A (Tc) | 33mOhm @ 500mA, 10V | 5V @ 4mA | 224 nC @ 10 V | 7500 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXFN102 | Box | HiPerFET™, Polar | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | - | SOT-227B | - | 600W (Tc) | - | ||||
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SIR464DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 50A PPAK SO-8 | Na stanie70330 pcs | - | 30 V | 50A (Tc) | 3.1mOhm @ 15A, 10V | 2.5V @ 250µA | 95 nC @ 10 V | 3545 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | SIR464 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5.2W (Ta), 69W (Tc) | - | ||||
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FDS6670S | Fairchild Semiconductor | SMALL SIGNAL N-CHANNEL MOSFET | Na stanie38210 pcs | - | 30 V | 13.5A (Ta) | 9mOhm @ 13.5A, 10V | 3V @ 1mA | 34 nC @ 5 V | 2674 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 1W (Ta) | - | ||||
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DMN1019UVT-7 | Diodes Incorporated | MOSFET N-CH 12V 10.7A TSOT26 | Na stanie253210 pcs | - | 12 V | 10.7A (Ta) | 10mOhm @ 9.7A, 4.5V | 800mV @ 250µA | 50.4 nC @ 8 V | 2588 pF @ 10 V | - | 1.2V, 4.5V | ±8V | N-Channel | - | DMN1019 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | TSOT-26 | - | 1.73W (Ta) | - | ||||
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2SK3229-E | Renesas Electronics America Inc | N-CHANNEL POWER MOSFET | Na stanie6078 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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FDME0106NZT | Fairchild Semiconductor | SMALL SIGNAL N-CHANNEL MOSFET | Na stanie219660 pcs | - | 20 V | 9A (Ta) | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | 865 pF @ 10 V | - | 1.8V, 4.5V | ±12V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerUFDFN | - | MicroFet 1.6x1.6 Thin | - | 700mW (Ta) | - | ||||
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SI1032X-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 200MA SC89-3 | Na stanie3960 pcs | - | 20 V | 200mA (Ta) | 5Ohm @ 200mA, 4.5V | 1.2V @ 250µA | 0.75 nC @ 4.5 V | - | - | 1.5V, 4.5V | ±6V | N-Channel | - | SI1032 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | - | SC-89-3 | - | 300mW (Ta) | - | ||||
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IRFSL4227PBF | Infineon Technologies | MOSFET N-CH 200V 62A TO262 | Na stanie5230 pcs | - | 200 V | 62A (Tc) | 26mOhm @ 46A, 10V | 5V @ 250µA | 98 nC @ 10 V | 4600 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | TO-262 | - | 330W (Tc) | - | ||||
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IXFH60N50P3 | IXYS | MOSFET N-CH 500V 60A TO247AD | Na stanie5709 pcs | - | 500 V | 60A (Tc) | 100mOhm @ 30A, 10V | 5V @ 4mA | 96 nC @ 10 V | 6250 pF @ 25 V | - | 10V | ±30V | N-Channel | - | IXFH60 | Tube | HiPerFET™, Polar3™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247AD (IXFH) | - | 1040W (Tc) | - | ||||
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FQU5N50CTU-WS | onsemi | MOSFET N-CH 500V 4A IPAK | Na stanie4840 pcs | - | 500 V | 4A (Tc) | 1.4Ohm @ 2A, 10V | 4V @ 250µA | 24 nC @ 10 V | 625 pF @ 25 V | - | 10V | ±30V | N-Channel | - | FQU5N50 | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 2.5W (Ta), 48W (Tc) | - | ||||
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DMG6402LVT-7 | Diodes Incorporated | MOSFET N-CH 30V 6A TSOT26 | Na stanie393900 pcs | - | 30 V | 6A (Ta) | 30mOhm @ 7A, 10V | 2V @ 250µA | 11.4 nC @ 10 V | 498 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | DMG6402 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | TSOT-26 | - | 1.75W (Ta) | - | ||||
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IRF610LPBF | Vishay Siliconix | MOSFET N-CH 200V 3.3A I2PAK | Na stanie57140 pcs | - | 200 V | 3.3A (Tc) | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | 140 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IRF610 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | I2PAK | - | 3W (Ta), 36W (Tc) | - | ||||
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MTSF3N03HDR2 | onsemi | SMALL SIGNAL N-CHANNEL MOSFET | Na stanie172560 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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IPI65R280C6 | Infineon Technologies | N-CHANNEL POWER MOSFET | Na stanie28068 pcs | - | 650 V | 13.8A (Tc) | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | 950 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS C6™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | - | PG-TO262-3-1 | - | 104W (Tc) | - | ||||
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UPA2713GR-E1-A | Renesas Electronics America Inc | P-CHANNEL POWER MOSFET | Na stanie51510 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | Bulk | * | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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IRF820A | Vishay Siliconix | MOSFET N-CH 500V 2.5A TO220AB | Na stanie5200 pcs | - | 500 V | 2.5A (Tc) | 3Ohm @ 1.5A, 10V | 4.5V @ 250µA | 17 nC @ 10 V | 340 pF @ 25 V | - | 10V | ±30V | N-Channel | - | IRF820 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 50W (Tc) | - | ||||
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IPP60R165CP | Infineon Technologies | 21A, 600V, 0.165OHM, N-CHANNEL M | Na stanie4650 pcs | - | 600 V | 21A (Tc) | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52 nC @ 10 V | 2000 pF @ 100 V | - | 10V | ±20V | N-Channel | - | - | Bulk | CoolMOS™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | PG-TO220-3-1 | - | 192W (Tc) | - | ||||
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SI7635DP-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 40A PPAK SO-8 | Na stanie4530 pcs | - | 20 V | 40A (Tc) | 4.9mOhm @ 26A, 10V | 2.2V @ 250µA | 143 nC @ 10 V | 4595 pF @ 10 V | - | 4.5V, 10V | ±16V | P-Channel | - | SI7635 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 5W (Ta), 54W (Tc) | - | ||||
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ATP212-S-TL-H | onsemi | MOSFET N-CH 60V 35A ATPAK | Na stanie4480 pcs | - | - | 35A (Tj) | - | - | - | - | - | - | - | - | - | ATP212 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | ATPAK (2 leads+tab) | - | ATPAK | - | - | - | ||||
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FDFS2P102 | Fairchild Semiconductor | MOSFET P-CH 20V 3.3A 8SOIC | Na stanie104290 pcs | Schottky Diode (Isolated) | 20 V | 3.3A (Ta) | 125mOhm @ 3.3A, 10V | 2V @ 250µA | 10 nC @ 10 V | 270 pF @ 10 V | - | 4.5V, 10V | ±20V | P-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 900mW (Ta) | - | ||||
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AONS66916 | Alpha & Omega Semiconductor Inc. | N | Na stanie18080 pcs | - | 100 V | 100A (Tc) | 3.6mOhm @ 20A, 10V | 3.6V @ 250µA | 95 nC @ 10 V | 5325 pF @ 50 V | - | 6V, 10V | ±20V | N-Channel | - | AONS669 | Tape & Reel (TR) | AlphaSGT™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSMD, Flat Leads | - | 8-DFN (5x6) | - | 215W (Tc) | - | ||||
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IRF9530 | Vishay Siliconix | MOSFET P-CH 100V 12A TO220AB | Na stanie4590 pcs | - | 100 V | 12A (Tc) | 300mOhm @ 7.2A, 10V | 4V @ 250µA | 38 nC @ 10 V | 860 pF @ 25 V | - | 10V | ±20V | P-Channel | - | IRF9530 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 88W (Tc) | - | ||||
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SUD50P04-13L-GE3 | Vishay Siliconix | MOSFET P-CH 40V 60A TO252 | Na stanie5010 pcs | - | 40 V | 60A (Tc) | 13mOhm @ 30A, 10V | 3V @ 250µA | 95 nC @ 10 V | 3120 pF @ 25 V | - | 4.5V, 10V | ±20V | P-Channel | - | SUD50 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | - | 3W (Ta), 93.7W (Tc) | - | ||||
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UPA2794GR(0)-E1-AZ | Renesas Electronics America Inc | TRANSISTOR | Na stanie3670 pcs | - | - | 5.5A (Tj) | - | - | - | - | - | - | - | - | - | - | Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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IRF530A | Fairchild Semiconductor | POWER FIELD-EFFECT TRANSISTOR, 1 | Na stanie79200 pcs | - | 100 V | 14A (Tc) | 110mOhm @ 7A, 10V | 4V @ 250µA | 36 nC @ 10 V | 790 pF @ 25 V | - | 10V | - | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 55W (Tc) | - | ||||
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FDS7766 | Fairchild Semiconductor | SMALL SIGNAL N-CHANNEL MOSFET | Na stanie30962 pcs | - | 30 V | 17A (Ta) | 5mOhm @ 17A, 10V | 3V @ 250µA | 69 nC @ 5 V | 4973 pF @ 15 V | - | 4.5V, 10V | ±16V | N-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 1W (Ta) | - | ||||
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FDMS0309AS | onsemi | MOSFET N-CH 30V 21A/49A 8PQFN | Na stanie72470 pcs | - | 30 V | 21A (Ta), 49A (Tc) | 3.5mOhm @ 21A, 10V | 3V @ 1mA | 47 nC @ 10 V | 3000 pF @ 15 V | - | 4.5V, 10V | ±20V | N-Channel | - | FDMS03 | Tape & Reel (TR) | PowerTrench®, SyncFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 8-PQFN (5x6) | - | 2.5W (Ta), 50W (Tc) | - | ||||
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IRF9Z10 | Vishay Siliconix | MOSFET P-CH 60V 6.7A TO220AB | Na stanie4380 pcs | - | 60 V | 6.7A (Tc) | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | 270 pF @ 25 V | - | 10V | ±20V | P-Channel | - | IRF9 | Tube | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 43W (Tc) | - | ||||
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NP52N06SLG-E1-AY | Renesas Electronics America | MOSFET N-CH 60V 52A TO252 | Na stanie51010 pcs | N-Channel | - | 60V | 52A (Tc) | 17.5 mOhm @ 26A, 10V | - | 39nC @ 10V | 2100pF @ 10V | - | - | - | NP52N06SLG-E1-AY-ND NP52N06SLG-E1-AYTR |
- | - | - | NP52N06SLG-E1-AY | MOSFET N-CH 60V 52A TO252 | 1 (Unlimited) | 16 Weeks | N-Channel 60V 52A (Tc) 1.2W (Ta), 56W (Tc) Surface Mount TO-252 (MP-3ZK) | Tape & Reel (TR) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | - | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3ZK) | - | 1.2W (Ta), 56W (Tc) | ||||
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2SK3712-Z-E1-AZ | Renesas Electronics America Inc | MOSFET N-CH 250V 9A TO252 | Na stanie29857 pcs | - | 250 V | 9A (Tc) | 580mOhm @ 4.5A, 10V | 4.5V @ 1mA | 14 nC @ 10 V | 450 pF @ 10 V | - | - | - | N-Channel | - | - | Bulk | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (MP-3Z) | - | - | - | ||||
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SQJ469EP-T1_GE3 | Vishay Siliconix | MOSFET P-CH 80V 32A PPAK SO-8 | Na stanie30598 pcs | - | 80 V | 32A (Tc) | 25mOhm @ 10.2A, 10V | 2.5V @ 250µA | 155 nC @ 10 V | 5100 pF @ 40 V | - | 6V, 10V | ±20V | P-Channel | - | SQJ469 | Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | PowerPAK® SO-8 | - | 100W (Tc) | - | ||||
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VQ1004P | Vishay Siliconix | MOSFET N-CH 60V 0.4A TO-205 | Na stanie3700 pcs | - | - | 830mA (Ta) | - | - | - | - | - | 5V, 10V | ±20V | - | - | VQ1004 | Tube | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | ||||
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NX7002AK,215 | Nexperia USA Inc. | MOSFET N-CH 60V 190MA TO236AB | Na stanie1117850 pcs | - | 60 V | 190mA (Ta) | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43 nC @ 4.5 V | 17 pF @ 10 V | - | 5V, 10V | ±20V | N-Channel | - | NX7002 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | TO-236AB | - | 265mW (Ta), 1.33W (Tc) | - | ||||
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SI7423DN-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 7.4A PPAK1212-8 | Na stanie53570 pcs | - | 30 V | 7.4A (Ta) | 18mOhm @ 11.7A, 10V | 3V @ 250µA | 56 nC @ 10 V | - | - | 4.5V, 10V | ±20V | P-Channel | - | SI7423 | Tape & Reel (TR) | TrenchFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | - | PowerPAK® 1212-8 | - | 1.5W (Ta) | - | ||||
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FQPF4N20 | Fairchild Semiconductor | MOSFET N-CH 200V 2.8A TO220F | Na stanie163350 pcs | - | 200 V | 2.8A (Tc) | 1.4Ohm @ 1.4A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | 220 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Tube | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220F-3 | - | 27W (Tc) | - | ||||
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HUF75344A3 | Fairchild Semiconductor | MOSFET N-CH 55V 75A TO3P | Na stanie21233 pcs | - | 55 V | 75A (Tc) | 8mOhm @ 75A, 10V | 4V @ 250µA | 208 nC @ 20 V | 4855 pF @ 25 V | - | 10V | ±20V | N-Channel | - | - | Tube | UltraFET™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | - | TO-3P | - | 288.5W (Tc) | - | ||||
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FQB12N60CTM | Fairchild Semiconductor | MOSFET N-CH 600V 12A D2PAK | Na stanie4860 pcs | - | 600 V | 12A (Tc) | 650mOhm @ 6A, 10V | 4V @ 250µA | 63 nC @ 10 V | 2290 pF @ 25 V | - | 10V | ±30V | N-Channel | - | - | Bulk | QFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK (TO-263) | - | 3.13W (Ta), 225W (Tc) | - | ||||
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IXTK200N10L2 | IXYS | MOSFET N-CH 100V 200A TO264 | Na stanie1464 pcs | - | 100 V | 200A (Tc) | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540 nC @ 10 V | 23000 pF @ 25 V | - | 10V | ±20V | N-Channel | - | IXTK200 | Tube | Linear L2™ | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264 (IXTK) | - | 1040W (Tc) | - | ||||
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SI6467DQ | Fairchild Semiconductor | P-CHANNEL MOSFET | Na stanie4950 pcs | - | 20 V | 9.2A (Ta) | 12mOhm @ 9.2A, 4.5V | 1.5V @ 250µA | 96 nC @ 4.5 V | 5878 pF @ 10 V | - | 1.8V, 4.5V | ±8V | P-Channel | - | - | Bulk | PowerTrench® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | - | 8-TSSOP | - | 600mW (Ta) | - | ||||
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IRFR4615PBF | International Rectifier | MOSFET N-CH 150V 33A DPAK | Na stanie4310 pcs | - | 150 V | 33A (Tc) | 42mOhm @ 21A, 10V | 5V @ 100µA | 26 nC @ 10 V | 1750 pF @ 50 V | - | 10V | ±20V | N-Channel | - | - | Bulk | HEXFET® | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 144W (Tc) | - | ||||
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RRF015P03TL | Rohm Semiconductor | MOSFET P-CH 30V 1.5A TUMT3 | Na stanie200730 pcs | - | 30 V | 1.5A (Ta) | 160mOhm @ 1.5A, 10V | 2.5V @ 1mA | 6.4 nC @ 10 V | 230 pF @ 10 V | - | 4V, 10V | ±20V | P-Channel | - | RRF015 | Tape & Reel (TR) | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | - | TUMT3 | - | 320mW (Ta) | - | ||||
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IXFK52N60Q2 | IXYS | MOSFET N-CH 600V 52A TO264AA | Na stanie5450 pcs | - | 600 V | 52A (Tc) | 115mOhm @ 500mA, 10V | 4.5V @ 8mA | 198 nC @ 10 V | 6800 pF @ 25 V | - | 10V | ±30V | N-Channel | - | IXFK52 | Tube | HiPerFET™, Q2 Class | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | - | TO-264AA (IXFK) | - | 735W (Tc) | - |