Porównać | Obraz | Część # | Producent | Opis | Inwentarz | Model ECAD | RoHS | Opakowania | Cecha FET | Spust do źródła napięcia (Vdss) | Prąd - Ciągły Odpływ (Id) @ 25 ° C | RDS (Max) @ ID, Vgs | VGS (th) (Max) @ Id | Opłata bramkowa (Qg) (maksymalna) @ Vgs | Pojemność wejściowa (Ciss) (maks.) @ Vds | Napięcie Napędu (Max Rds On, Min Rds On) | Vgs (maks.) | Rodzaj FET | Status bezołowiowy / status RoHS | Poziom czułości na wilgoć (MSL) | Inne nazwy | Podstawowy numer produktu | Pakiet | Seria | szczegółowy opis | Technologia | temperatura robocza | Rodzaj mocowania | Package / Case | Dostawca urządzeń Pakiet | Strata mocy (max) | Ilość |
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IRFP250MPBF | Infineon Technologies | MOSFET N-CH 200V 30A TO247AC | Na stanie31795 pcs | - | - | 200 V | 30A (Tc) | 75mOhm @ 18A, 10V | 4V @ 250µA | 123 nC @ 10 V | 2159 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRFP250 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 214W (Tc) | |||||
SPD30N08S2-22 | Infineon Technologies | MOSFET N-CH 75V 30A TO252-3 | Na stanie4300 pcs | - | - | 75 V | 30A (Tc) | 21.5mOhm @ 25A, 10V | 4V @ 80µA | 57 nC @ 10 V | 1950 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | SPD30N | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3-11 | 136W (Tc) | |||||
GP2M005A050PG | Global Power Technologies Group | MOSFET N-CH 500V 4.5A IPAK | Na stanie4680 pcs | Tube | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 15nC @ 10V | 645pF @ 25V | 10V | ±30V | N-Channel | Lead free / RoHS Compliant | 1 (Unlimited) | 1560-1198-1 1560-1198-1-ND 1560-1198-5 |
- | - | - | N-Channel 500V 4.5A (Tc) 98.4W (Tc) Through Hole I-PAK | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | |||||
RSH065N03TB1 | Rohm Semiconductor | MOSFET N-CH 30V 6.5A 8SOP | Na stanie114400 pcs | - | - | 30 V | 6.5A (Ta) | 27mOhm @ 6.5A, 10V | 2.5V @ 1mA | 8.6 nC @ 5 V | 430 pF @ 10 V | 4V, 10V | ±20V | N-Channel | - | - | - | RSH065 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 2W (Ta) | |||||
SSM3K15FS,LF | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 100MA SSM | Na stanie4010 pcs | - | - | 30 V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 7.8 pF @ 3 V | 2.5V, 4V | ±20V | N-Channel | - | - | - | SSM3K15 | Tape & Reel (TR) | π-MOSVI | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 200mW (Ta) | |||||
IRF2804STRRPBF | Infineon Technologies | MOSFET N-CH 40V 75A D2PAK | Na stanie3880 pcs | - | - | 40 V | 75A (Tc) | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | 6450 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRF2804 | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | |||||
FQB5P20TM | onsemi | MOSFET P-CH 200V 4.8A D2PAK | Na stanie4290 pcs | - | - | 200 V | 4.8A (Tc) | 1.4Ohm @ 2.4A, 10V | 5V @ 250µA | 13 nC @ 10 V | 430 pF @ 25 V | 10V | ±30V | P-Channel | - | - | - | FQB5 | Tape & Reel (TR) | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.13W (Ta), 75W (Tc) | |||||
IRF3305PBF | Infineon Technologies | MOSFET N-CH 55V 75A TO220AB | Na stanie3700 pcs | - | - | 55 V | 75A (Tc) | 8mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | 3650 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | |||||
STI4N62K3 | STMicroelectronics | MOSFET N-CH 620V 3.8A I2PAK | Na stanie53790 pcs | - | - | 620 V | 3.8A (Tc) | 2Ohm @ 1.9A, 10V | 4.5V @ 50µA | 22 nC @ 10 V | 550 pF @ 50 V | 10V | ±30V | N-Channel | - | - | - | STI4N62 | Tube | SuperMESH3™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 70W (Tc) | |||||
STB25NM60N-1 | STMicroelectronics | MOSFET N-CH 600V 21A I2PAK | Na stanie4900 pcs | - | - | 600 V | 21A (Tc) | 160mOhm @ 10.5A, 10V | 4V @ 250µA | 84 nC @ 10 V | 2400 pF @ 50 V | 10V | ±25V | N-Channel | - | - | - | - | Tube | MDmesh™ II | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 160W (Tc) | |||||
SI4048DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 19.3A 8SO | Na stanie5170 pcs | - | - | 30 V | 19.3A (Tc) | 85mOhm @ 15A, 10V | 3V @ 250µA | 51 nC @ 10 V | 2060 pF @ 15 V | 10V | ±20V | N-Channel | - | - | - | SI4048 | Tape & Reel (TR) | TrenchFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2.5W (Ta), 5.7W (Tc) | |||||
NTTS2P02R2G | onsemi | MOSFET P-CH 20V 2.4A MICRO8 | Na stanie3780 pcs | - | - | 20 V | 2.4A (Ta) | 90mOhm @ 2.4A, 4.5V | 1.4V @ 250µA | 18 nC @ 4.5 V | 550 pF @ 16 V | 2.5V, 4.5V | ±8V | P-Channel | - | - | - | NTTS2P | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP | 780mW (Ta) | |||||
NTB110N65S3HF | onsemi | MOSFET N-CH 650V 30A D2PAK-3 | Na stanie7257 pcs | - | - | 650 V | 30A (Tc) | 110mOhm @ 15A, 10V | 5V @ 740µA | 62 nC @ 10 V | 2635 pF @ 400 V | 10V | ±30V | N-Channel | - | - | - | NTB110 | Tape & Reel (TR) | FRFET®, SuperFET® III | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK-3 (TO-263-3) | 240W (Tc) | |||||
FCD360N65S3R0 | onsemi | MOSFET N-CH 650V 10A DPAK | Na stanie32083 pcs | - | - | 650 V | 10A (Tc) | 360mOhm @ 5A, 10V | 4.5V @ 1mA | 18 nC @ 10 V | 730 pF @ 400 V | 10V | ±30V | N-Channel | - | - | - | FCD360 | Tape & Reel (TR) | SuperFET® III | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | 83W (Tc) | |||||
2N7002T-7-G | Diodes Incorporated | MOSFET N-CH 60V SOT523 | Na stanie4600 pcs | - | - | - | - | - | - | - | - | - | - | - | - | - | - | 2N7002 | Tape & Reel (TR) | * | - | - | - | - | - | - | - | |||||
IRF2907ZSTRLPBF | Infineon Technologies | MOSFET N-CH 75V 160A D2PAK | Na stanie11932 pcs | - | - | 75 V | 160A (Tc) | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270 nC @ 10 V | 7500 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRF2907 | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | |||||
STW9NK95Z | STMicroelectronics | MOSFET N-CH 950V 7A TO247 | Na stanie20408 pcs | - | - | 950 V | 7A (Tc) | 1.38Ohm @ 3.6A, 10V | 4.5V @ 100µA | 56 nC @ 10 V | 2256 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | STW9 | Tube | SuperMESH™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 160W (Tc) | |||||
HUF75645P3 | onsemi | MOSFET N-CH 100V 75A TO220-3 | Na stanie27571 pcs | - | - | 100 V | 75A (Tc) | 14mOhm @ 75A, 10V | 4V @ 250µA | 238 nC @ 20 V | 3790 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | HUF75645 | Tube | UltraFET™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 310W (Tc) | |||||
BSR316PH6327XTSA1 | Infineon Technologies | MOSFET P-CH 100V 360MA SC59 | Na stanie147720 pcs | - | - | 100 V | 360mA (Ta) | 1.8Ohm @ 360mA, 10V | 1V @ 170µA | 7 nC @ 10 V | 165 pF @ 25 V | 4.5V, 10V | ±20V | P-Channel | - | - | - | BSR316 | Tape & Reel (TR) | SIPMOS® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | PG-SC59-3 | 500mW (Tc) | |||||
STU2N95K5 | STMicroelectronics | MOSFET N-CH 950V 2A IPAK | Na stanie57020 pcs | - | - | 950 V | 2A (Tc) | 5Ohm @ 1A, 10V | 5V @ 100µA | 10 nC @ 10 V | 105 pF @ 100 V | 10V | 30V | N-Channel | - | - | - | STU2N95 | Tube | SuperMESH5™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 45W (Tc) | |||||
APT22F100J | Microchip Technology | MOSFET N-CH 1000V 23A ISOTOP | Na stanie1103 pcs | - | - | 1000 V | 23A (Tc) | 380mOhm @ 18A, 10V | - | 305 nC @ 10 V | 9835 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | APT22F100 | Tube | POWER MOS 8™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | ISOTOP® | 545W (Tc) | |||||
IRLR024NTRRPBF | Infineon Technologies | MOSFET N-CH 55V 17A DPAK | Na stanie4430 pcs | - | - | 55 V | 17A (Tc) | 65mOhm @ 10A, 10V | 2V @ 250µA | 15 nC @ 5 V | 480 pF @ 25 V | 4V, 10V | ±16V | N-Channel | - | - | - | - | Tape & Reel (TR) | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 45W (Tc) | |||||
ZXMN2F34FHTA | Diodes Incorporated | MOSFET N-CH 20V 3.4A SOT23-3 | Na stanie246110 pcs | - | - | 20 V | 3.4A (Ta) | 60mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 2.8 nC @ 4.5 V | 277 pF @ 10 V | 2.5V, 4.5V | ±12V | N-Channel | - | - | - | ZXMN2 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 950mW (Ta) | |||||
IRFP32N50KPBF | Vishay Siliconix | MOSFET N-CH 500V 32A TO247-3 | Na stanie6419 pcs | - | - | 500 V | 32A (Tc) | 160mOhm @ 32A, 10V | 5V @ 250µA | 190 nC @ 10 V | 5280 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | IRFP32 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 460W (Tc) | |||||
NTF5P03T3G | onsemi | MOSFET P-CH 30V 3.7A SOT223 | Na stanie84620 pcs | - | - | 30 V | 3.7A (Ta) | 100mOhm @ 5.2A, 10V | 3V @ 250µA | 38 nC @ 10 V | 950 pF @ 25 V | 4.5V, 10V | ±20V | P-Channel | - | - | - | NTF5P03 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 (TO-261) | 1.56W (Ta) | |||||
AUIRFS3004-7P | Infineon Technologies | MOSFET N-CH 40V 240A D2PAK-7 | Na stanie4090 pcs | - | - | 40 V | 240A (Tc) | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | 9130 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 380W (Tc) | |||||
STB18N60M2 | STMicroelectronics | MOSFET N-CH 600V 13A D2PAK | Na stanie23283 pcs | - | - | 600 V | 13A (Tc) | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | 791 pF @ 100 V | 10V | ±25V | N-Channel | - | - | - | STB18 | Tape & Reel (TR) | MDmesh™ II Plus | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 110W (Tc) | |||||
MMBF0201NLT1 | onsemi | MOSFET N-CH 20V 300MA SOT-23 | Na stanie5040 pcs | - | - | 20 V | 300mA (Ta) | 1Ohm @ 300mA, 10V | 2.4V @ 250µA | - | 45 pF @ 5 V | - | - | N-Channel | - | - | - | MMBF02 | Cut Tape (CT) | - | - | MOSFET (Metal Oxide) | - | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | - | |||||
IRFP150MPBF | Infineon Technologies | MOSFET N-CH 100V 42A TO247AC | Na stanie40312 pcs | - | - | 100 V | 42A (Tc) | 36mOhm @ 23A, 10V | 4V @ 250µA | 110 nC @ 10 V | 1900 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | IRFP150 | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 160W (Tc) | |||||
3LN01M-TL-E | onsemi | MOSFET N-CH 30V 150MA SC70/MCPH3 | Na stanie4530 pcs | - | - | 30 V | 150mA (Ta) | 3.7Ohm @ 80mA, 4V | 1.3V @ 100µA | 1.58 nC @ 10 V | 7 pF @ 10 V | 1.5V, 4V | ±10V | N-Channel | - | - | - | 3LN01 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SC-70 / MCP3 | 150mW (Ta) | |||||
IPB11N03LA | Infineon Technologies | MOSFET N-CH 25V 30A TO263-3 | Na stanie5170 pcs | - | - | 25 V | 30A (Tc) | 11.2mOhm @ 30A, 10V | 2V @ 20µA | 11 nC @ 5 V | 1358 pF @ 15 V | 4.5V, 10V | ±20V | N-Channel | - | - | - | IPB11N | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 52W (Tc) | |||||
SI2323DS-T1 | Vishay Siliconix | MOSFET P-CH 20V 3.7A SOT23-3 | Na stanie4200 pcs | - | - | 20 V | 3.7A (Ta) | 39mOhm @ 4.7A, 4.5V | 1V @ 250µA | 19 nC @ 4.5 V | 1020 pF @ 10 V | 1.8V, 4.5V | ±8V | P-Channel | - | - | - | SI2323 | Tape & Reel (TR) | TrenchFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 750mW (Ta) | |||||
FDPF17N60NT | onsemi | MOSFET N-CH 600V 17A TO220F | Na stanie30794 pcs | - | - | 600 V | 17A (Tc) | 340mOhm @ 8.5A, 10V | 5V @ 250µA | 65 nC @ 10 V | 3040 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | FDPF17 | Tube | UniFET™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F-3 | 62.5W (Tc) | |||||
SI2311DS-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 3A SOT23-3 | Na stanie3870 pcs | - | - | 8 V | 3A (Ta) | 45mOhm @ 3.5A, 4.5V | 800mV @ 250µA | 12 nC @ 4.5 V | 970 pF @ 4 V | 1.8V, 4.5V | ±8V | P-Channel | - | - | - | SI2311 | Tape & Reel (TR) | TrenchFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 710mW (Ta) | |||||
DMN2500UFB4-7 | Diodes Incorporated | MOSFET N-CH 20V 810MA 3DFN | Na stanie3810 pcs | - | - | 20 V | 810mA (Ta) | 400mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74 nC @ 4.5 V | 60.67 pF @ 16 V | 1.8V, 4.5V | ±6V | N-Channel | - | - | - | DMN2500 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN1006-3 | 460mW (Ta) | |||||
DMN53D0L-7 | Diodes Incorporated | MOSFET N-CH 50V 500MA SOT23 | Na stanie605550 pcs | - | - | 50 V | 500mA (Ta) | 1.6Ohm @ 500mA, 10V | 1.5V @ 250µA | 0.6 nC @ 4.5 V | 46 pF @ 25 V | 2.5V, 10V | ±20V | N-Channel | - | - | - | DMN53 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 370mW (Ta) | |||||
TN0620N3-G | Microchip Technology | MOSFET N-CH 200V 250MA TO92-3 | Na stanie34105 pcs | - | - | 200 V | 250mA (Tj) | 6Ohm @ 500mA, 10V | 1.6V @ 1mA | - | 150 pF @ 25 V | 5V, 10V | ±20V | N-Channel | - | - | - | TN0620 | Bag | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | |||||
VN10KN3-G | Microchip Technology | MOSFET N-CH 60V 310MA TO92-3 | Na stanie69830 pcs | - | - | 60 V | 310mA (Tj) | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | 60 pF @ 25 V | 5V, 10V | ±30V | N-Channel | - | - | - | VN10KN3 | Bag | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 | 1W (Tc) | |||||
DN2540N5-G | Microchip Technology | MOSFET N-CH 400V 500MA TO220-3 | Na stanie30657 pcs | - | Depletion Mode | 400 V | 500mA (Tj) | 25Ohm @ 120mA, 0V | - | - | 300 pF @ 25 V | 0V | ±20V | N-Channel | - | - | - | DN2540 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 15W (Tc) | |||||
IRL3302 | Infineon Technologies | MOSFET N-CH 20V 39A TO220AB | Na stanie4850 pcs | - | - | 20 V | 39A (Tc) | 20mOhm @ 23A, 7V | 700mV @ 250µA (Min) | 31 nC @ 4.5 V | 1300 pF @ 15 V | 4.5V, 7V | ±10V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 57W (Tc) | |||||
IPB065N15N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 150V 130A TO263-7 | Na stanie5030 pcs | - | - | 150 V | 130A (Tc) | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | 7300 pF @ 75 V | 8V, 10V | ±20V | N-Channel | - | - | - | IPB065N | Tape & Reel (TR) | OptiMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | PG-TO263-7 | 300W (Tc) | |||||
FQD2N40TF | onsemi | MOSFET N-CH 400V 1.4A DPAK | Na stanie4380 pcs | - | - | 400 V | 1.4A (Tc) | 5.8Ohm @ 700mA, 10V | 5V @ 250µA | 5.5 nC @ 10 V | 150 pF @ 25 V | 10V | ±30V | N-Channel | - | - | - | FQD2 | Tape & Reel (TR) | QFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 2.5W (Ta), 25W (Tc) | |||||
BUZ31L E3044A | Infineon Technologies | MOSFET N-CH 200V 13.5A TO220-3 | Na stanie5170 pcs | - | - | 200 V | 13.5A (Tc) | 200mOhm @ 7A, 5V | 2V @ 1mA | - | 1600 pF @ 25 V | 5V | ±20V | N-Channel | - | - | - | - | Tape & Reel (TR) | SIPMOS® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 95W (Tc) | |||||
IRLD120PBF | Vishay Siliconix | MOSFET N-CH 100V 1.3A 4DIP | Na stanie39130 pcs | - | - | 100 V | 1.3A (Ta) | 270mOhm @ 780mA, 5V | 2V @ 250µA | 12 nC @ 5 V | 490 pF @ 25 V | 4V, 5V | ±10V | N-Channel | - | - | - | IRLD120 | Tube | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-HVMDIP | 1.3W (Ta) | |||||
IRFZ46ZPBF | Infineon Technologies | MOSFET N-CH 55V 51A TO220AB | Na stanie4800 pcs | - | - | 55 V | 51A (Tc) | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46 nC @ 10 V | 1460 pF @ 25 V | 10V | ±20V | N-Channel | - | - | - | - | Tube | HEXFET® | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | |||||
MMSF3P02HDR2 | onsemi | MOSFET P-CH 20V 5.6A 8SOIC | Na stanie4600 pcs | - | - | 20 V | 5.6A (Ta) | 75mOhm @ 3A, 10V | 2V @ 250µA | 46 nC @ 10 V | 1400 pF @ 16 V | 4.5V, 10V | ±20V | P-Channel | - | - | - | MMSF3P | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 2.5W (Ta) | |||||
SI4630DY-T1-E3 | Vishay Siliconix | MOSFET N-CH 25V 40A 8SO | Na stanie48030 pcs | - | - | 25 V | 40A (Tc) | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 161 nC @ 10 V | 6670 pF @ 15 V | 4.5V, 10V | ±16V | N-Channel | - | - | - | SI4630 | Tape & Reel (TR) | TrenchFET® | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.5W (Ta), 7.8W (Tc) | |||||
AOD7S65 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 650V 7A TO252 | Na stanie55840 pcs | - | - | 650 V | 7A (Tc) | 650mOhm @ 3.5A, 10V | 4V @ 250µA | 9.2 nC @ 10 V | 434 pF @ 100 V | 10V | ±30V | N-Channel | - | - | - | AOD7 | Tape & Reel (TR) | aMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 (DPAK) | 89W (Tc) | |||||
MCH3475-TL-E | onsemi | MOSFET N-CH 30V 1.8A SC70 | Na stanie96370 pcs | - | - | 30 V | 1.8A (Ta) | 180mOhm @ 900mA, 10V | - | 2 nC @ 10 V | 88 pF @ 10 V | 4V, 10V | ±20V | N-Channel | - | - | - | MCH3475 | Tape & Reel (TR) | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SC-70FL/MCPH3 | 800mW (Ta) | |||||
AO4452 | Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 8A 8SOIC | Na stanie5100 pcs | - | - | 100 V | 8A (Ta) | 25mOhm @ 8A, 10V | 4V @ 250µA | 34 nC @ 10 V | 2200 pF @ 50 V | 7V, 10V | ±25V | N-Channel | - | - | - | AO44 | Tape & Reel (TR) | SDMOS™ | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) |