Lista produktów
| Porównać | Obraz | Część # | Producent | Opis | Inwentarz | Model ECAD | RoHS | Opakowania | Cecha FET | Spust do źródła napięcia (Vdss) | Prąd - Ciągły Odpływ (Id) @ 25 ° C | RDS (Max) @ ID, Vgs | VGS (th) (Max) @ Id | Opłata bramkowa (Qg) (maksymalna) @ Vgs | Pojemność wejściowa (Ciss) (maks.) @ Vds | Napięcie - Test | Napięcie Napędu (Max Rds On, Min Rds On) | Vgs (maks.) | Rodzaj IGBT | Rodzaj FET | Inne nazwy | Status bezołowiowy / status RoHS | Poziom czułości na wilgoć (MSL) | Inne nazwy | Podstawowy numer produktu | Pakiet | Seria | Numer części producenta | Opis | Poziom czułości na wilgoć (MSL) | Standardowy czas oczekiwania producenta | Rozszerzony opis | Stan RoHS | szczegółowy opis | Technologia | temperatura robocza | Rodzaj mocowania | Package / Case | Polaryzacja | Dostawca urządzeń Pakiet | Napięcie - Podział | Strata mocy (max) | Stosunek pojemności | Ilość |
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STP2N62K3 | STMicroelectronics | MOSFET N-CH 620V 2.2A TO220 | Na stanie73790 pcs | - | - | 620 V | 2.2A (Tc) | 3.6Ohm @ 1.1A, 10V | 4.5V @ 50µA | 15 nC @ 10 V | 340 pF @ 50 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | STP2N | Tube | SuperMESH3™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 45W (Tc) | - | ||||
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IRFZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A TO263 | Na stanie36370 pcs | - | - | 60 V | 17A (Tc) | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | 640 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IRFZ24 | Tube | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263 (D²Pak) | - | 3.7W (Ta), 60W (Tc) | - | ||||
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STB30NF10T4 | STMicroelectronics | MOSFET N-CH 100V 35A D2PAK | Na stanie30393 pcs | - | - | 100 V | 35A (Tc) | 45mOhm @ 15A, 10V | 4V @ 250µA | 55 nC @ 10 V | 1180 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | STB30 | Tape & Reel (TR) | STripFET™ II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 115W (Tc) | - | ||||
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SPD07N60C3BTMA1 | Infineon Technologies | MOSFET N-CH 650V 7.3A TO252-3 | Na stanie5340 pcs | - | - | 650 V | 7.3A (Tc) | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | 790 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | SPD07N | Tape & Reel (TR) | CoolMOS™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | PG-TO252-3-11 | - | 83W (Tc) | - | ||||
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IRFR3709ZTRLPBF | Infineon Technologies | MOSFET N-CH 30V 86A DPAK | Na stanie104140 pcs | - | - | 30 V | 86A (Tc) | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26 nC @ 4.5 V | 2330 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | IRFR3709 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 79W (Tc) | - | ||||
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NDT451N | onsemi | MOSFET N-CH 30V 5.5A SOT-223-4 | Na stanie4760 pcs | - | - | 30 V | 5.5A (Ta) | 50mOhm @ 5.5A, 10V | 3V @ 250µA | 25 nC @ 10 V | 730 pF @ 10 V | - | - | - | - | N-Channel | - | - | - | - | NDT451 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | - | Surface Mount | TO-261-4, TO-261AA | - | SOT-223-4 | - | - | - | ||||
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FQB19N20CTM | onsemi | MOSFET N-CH 200V 19A D2PAK | Na stanie4330 pcs | - | - | 200 V | 19A (Tc) | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | 1080 pF @ 25 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | FQB19N20 | Tape & Reel (TR) | QFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D²PAK (TO-263) | - | 3.13W (Ta), 139W (Tc) | - | ||||
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GP1M018A020PG | Global Power Technologies Group | MOSFET N-CH 200V 18A IPAK | Na stanie49510 pcs | Tube | - | 200V | 18A (Tc) | 170 mOhm @ 9A, 10V | 5V @ 250µA | 18nC @ 10V | 950pF @ 25V | - | 10V | ±30V | - | N-Channel | - | Lead free / RoHS Compliant | 1 (Unlimited) | 1560-1190-1 1560-1190-1-ND 1560-1190-5 |
- | - | - | - | - | - | - | - | - | N-Channel 200V 18A (Tc) 94W (Tc) Through Hole I-PAK | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 94W (Tc) | - | ||||
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IXTP100N04T2 | IXYS | MOSFET N-CH 40V 100A TO220AB | Na stanie27829 pcs | - | - | 40 V | 100A (Tc) | 7mOhm @ 25A, 10V | 4V @ 250µA | 25.5 nC @ 10 V | 2690 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IXTP100 | Tube | TrenchT2™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 150W (Tc) | - | ||||
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IRLML5103GTRPBF | Infineon Technologies | MOSFET P-CH 30V 0.76A SOT-23-3 | Na stanie411000 pcs | - | P-Channel | - | 30V | 760mA (Ta) | 600 mOhm @ 600mA, 10V | 1V @ 250µA | 5.1nC @ 10V | 75pF @ 25V | - | 4.5V, 10V | ±20V | - | IRLML5103GTRPBFCT | - | - | - | - | - | HEXFET® | IRLML5103GTRPBF | MOSFET P-CH 30V 0.76A SOT-23-3 | 1 (Unlimited) | 10 Weeks | P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 | Cut Tape (CT) | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | - | TO-236-3, SC-59, SOT-23-3 | - | Micro3™/SOT-23 | - | 540mW (Ta) | ||||
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2V7002LT3G | onsemi | MOSFET N-CH 60V 115MA SOT23-3 | Na stanie4270 pcs | - | - | 60 V | 115mA (Tc) | 7.5Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 50 pF @ 25 V | - | 5V, 10V | ±20V | - | N-Channel | - | - | - | - | 2V7002 | Tape & Reel (TR) | Automotive, AEC-Q101 | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | SOT-23-3 (TO-236) | - | 225mW (Ta) | - | ||||
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IXFP3N120 | IXYS | MOSFET N-CH 1200V 3A TO220AB | Na stanie6745 pcs | - | - | 1200 V | 3A (Tc) | 4.5Ohm @ 500mA, 10V | 5V @ 1.5mA | 39 nC @ 10 V | 1050 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IXFP3 | Tube | HiPerFET™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220-3 | - | 200W (Tc) | - | ||||
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STW21NM60ND | STMicroelectronics | MOSFET N-CH 600V 17A TO247-3 | Na stanie4310 pcs | - | - | 600 V | 17A (Tc) | 220mOhm @ 8.5A, 10V | 5V @ 250µA | 60 nC @ 10 V | 1800 pF @ 50 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STW21 | Tube | FDmesh™ II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247-3 | - | 140W (Tc) | - | ||||
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IXTH76P10T | IXYS | MOSFET P-CH 100V 76A TO247 | Na stanie8191 pcs | - | - | 100 V | 76A (Tc) | 25mOhm @ 38A, 10V | 4V @ 250µA | 197 nC @ 10 V | 13700 pF @ 25 V | - | 10V | ±15V | - | P-Channel | - | - | - | - | IXTH76 | Tube | TrenchP™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | - | TO-247 (IXTH) | - | 298W (Tc) | - | ||||
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IPP80N04S3-04 | Infineon Technologies | MOSFET N-CH 40V 80A TO220-3 | Na stanie4190 pcs | - | - | 40 V | 80A (Tc) | 4.1mOhm @ 80A, 10V | 4V @ 90µA | 80 nC @ 10 V | 5200 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IPP80N | Tube | OptiMOS™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | PG-TO220-3-1 | - | 136W (Tc) | - | ||||
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SPB100N04S2-04 | Infineon Technologies | MOSFET N-CH 40V 100A TO263-3 | Na stanie3880 pcs | - | - | 40 V | 100A (Tc) | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | 7220 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | SPB100N | Tape & Reel (TR) | OptiMOS™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | PG-TO263-3-2 | - | 300W (Tc) | - | ||||
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IRLR8729TRPBF | Infineon Technologies | MOSFET N-CH 30V 58A DPAK | Na stanie4830 pcs | - | - | 30 V | 58A (Tc) | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16 nC @ 4.5 V | 1350 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | IRLR8729 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | D-Pak | - | 55W (Tc) | - | ||||
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AOD2910 | Alpha & Omega Semiconductor Inc. | MOSFET N CH 100V 6.5A TO252 | Na stanie127960 pcs | - | - | 100 V | 6.5A (Ta), 31A (Tc) | 24mOhm @ 20A, 10V | 2.7V @ 250µA | 25 nC @ 10 V | 1190 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | AOD291 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252 (DPAK) | - | 2.5W (Ta), 53.5W (Tc) | - | ||||
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IRF3709ZCS | Infineon Technologies | MOSFET N-CH 30V 87A D2PAK | Na stanie4050 pcs | - | - | 30 V | 87A (Tc) | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26 nC @ 4.5 V | 2130 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | - | Tube | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 79W (Tc) | - | ||||
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STU7N80K5 | STMicroelectronics | MOSFET N-CH 800V 6A IPAK | Na stanie31064 pcs | - | - | 800 V | 6A (Tc) | 1.2Ohm @ 3A, 10V | 5V @ 100µA | 13.4 nC @ 10 V | 360 pF @ 100 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | STU7N80 | Tube | SuperMESH5™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251 (IPAK) | - | 110W (Tc) | - | ||||
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DMP2047UCB4-7 | Diodes Incorporated | MOSFET P-CH 20V 4.1A U-WLB1010-4 | Na stanie109720 pcs | - | - | 20 V | 4.1A (Ta) | 47mOhm @ 1A, 4.5V | 1.2V @ 250µA | 2.3 nC @ 4.5 V | 218 pF @ 10 V | - | 2.5V, 4.5V | -6V | - | P-Channel | - | - | - | - | DMP2047 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | - | U-WLB1010-4 | - | 1W (Ta) | - | ||||
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ZVP2106A | Diodes Incorporated | MOSFET P-CH 60V 280MA TO92-3 | Na stanie97430 pcs | - | - | 60 V | 280mA (Ta) | 5Ohm @ 500mA, 10V | 3.5V @ 1mA | - | 100 pF @ 18 V | - | 10V | ±20V | - | P-Channel | - | - | - | - | ZVP2106 | Bulk | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) | - | TO-92 | - | 700mW (Ta) | - | ||||
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STF15NM60ND | STMicroelectronics | MOSFET N-CH 600V 14A TO220FP | Na stanie4910 pcs | - | - | 600 V | 14A (Tc) | 299mOhm @ 7A, 10V | 5V @ 250µA | 40 nC @ 10 V | 1250 pF @ 50 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STF15 | Tube | FDmesh™ II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220FP | - | 30W (Tc) | - | ||||
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FCPF400N80ZL1 | onsemi | MOSFET N-CH 800V 11A TO220F | Na stanie4120 pcs | - | - | 800 V | 11A (Tc) | 400mOhm @ 5.5A, 10V | 4.5V @ 1.1mA | 56 nC @ 10 V | 2350 pF @ 100 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | FCPF400 | Tube | SuperFET® II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220F-3 | - | 35.7W (Tc) | - | ||||
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STF34NM60ND | STMicroelectronics | MOSFET N-CH 600V 29A TO220FP | Na stanie4554 pcs | - | - | 600 V | 29A (Tc) | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4 nC @ 10 V | 2785 pF @ 50 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STF34 | Tube | FDmesh™ II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220FP | - | 40W (Tc) | - | ||||
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STU5N95K3 | STMicroelectronics | MOSFET N-CH 950V 4A IPAK | Na stanie32184 pcs | - | - | 950 V | 4A (Tc) | 3.5Ohm @ 2A, 10V | 5V @ 100µA | 19 nC @ 10 V | 460 pF @ 25 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | STU5N95 | Tube | SuperMESH3™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | TO-251 (IPAK) | - | 90W (Tc) | - | ||||
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NTD80N02-001 | onsemi | MOSFET N-CH 24V 80A IPAK | Na stanie4270 pcs | - | - | 24 V | 80A (Tc) | 5.8mOhm @ 80A, 10V | 3V @ 250µA | 42 nC @ 4.5 V | 2600 pF @ 20 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | NTD80 | Tube | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | - | I-PAK | - | 75W (Tc) | - | ||||
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IRLML2502GTRPBF | Infineon Technologies | MOSFET N-CH 20V 4.2A SOT23 | Na stanie5470 pcs | - | - | 20 V | 4.2A (Ta) | 45mOhm @ 4.2A, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | 740 pF @ 15 V | - | 2.5V, 4.5V | ±12V | - | N-Channel | - | - | - | - | - | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | - | Micro3™/SOT-23 | - | 1.25W (Ta) | - | ||||
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STP6N60M2 | STMicroelectronics | MOSFET N-CH 600V 4.5A TO220 | Na stanie59710 pcs | - | - | 600 V | 4.5A (Tc) | 1.2Ohm @ 2.25A, 10V | 4V @ 250µA | 8 nC @ 10 V | 232 pF @ 100 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STP6N60 | Tube | MDmesh™ II Plus | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 60W (Tc) | - | ||||
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SPP47N10 | Infineon Technologies | MOSFET N-CH 100V 47A TO220-3 | Na stanie5270 pcs | - | - | 100 V | 47A (Tc) | 33mOhm @ 33A, 10V | 4V @ 2mA | 105 nC @ 10 V | 2500 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | SPP47N | Tube | SIPMOS® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | PG-TO220-3-1 | - | 175W (Tc) | - | ||||
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IRL3705NS | Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | Na stanie4380 pcs | - | - | 55 V | 89A (Tc) | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | 3600 pF @ 25 V | - | 4V, 10V | ±16V | - | N-Channel | - | - | - | - | - | Tube | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 3.8W (Ta), 170W (Tc) | - | ||||
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IXTA2R4N120P | IXYS | MOSFET N-CH 1200V 2.4A TO263 | Na stanie10106 pcs | - | - | 1200 V | 2.4A (Tc) | 7.5Ohm @ 500mA, 10V | 4.5V @ 250µA | 37 nC @ 10 V | 1207 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IXTA2 | Tube | Polar | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263AA | - | 125W (Tc) | - | ||||
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IRFB4110GPBF | Infineon Technologies | MOSFET N-CH 100V 120A TO220AB | Na stanie4220 pcs | - | - | 100 V | 120A (Tc) | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 10 V | 9620 pF @ 50 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IRFB4110 | Tube | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 370W (Tc) | - | ||||
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IRFB4233PBF | Infineon Technologies | MOSFET N-CH 230V 56A TO220AB | Na stanie4070 pcs | - | - | 230 V | 56A (Tc) | 37mOhm @ 28A, 10V | 5V @ 250µA | 170 nC @ 10 V | 5510 pF @ 25 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | - | Tube | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | TO-220AB | - | 370W (Tc) | - | ||||
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STP4N62K3 | STMicroelectronics | MOSFET N-CH 620V 3.8A TO220 | Na stanie3730 pcs | - | - | 620 V | 3.8A (Tc) | 1.95Ohm @ 1.9A, 10V | 4.5V @ 50µA | 14 nC @ 10 V | 450 pF @ 50 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | STP4N | Tube | SuperMESH3™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 70W (Tc) | - | ||||
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HUF76609D3ST | onsemi | MOSFET N-CH 100V 10A TO252AA | Na stanie91090 pcs | - | - | 100 V | 10A (Tc) | 160mOhm @ 10A, 10V | 3V @ 250µA | 16 nC @ 10 V | 425 pF @ 25 V | - | 4.5V, 10V | ±16V | - | N-Channel | - | - | - | - | HUF76609 | Tape & Reel (TR) | UltraFET™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | - | 49W (Tc) | - | ||||
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FQA40N25 | onsemi | MOSFET N-CH 250V 40A TO3PN | Na stanie19681 pcs | - | - | 250 V | 40A (Tc) | 70mOhm @ 20A, 10V | 5V @ 250µA | 110 nC @ 10 V | 4000 pF @ 25 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | FQA40 | Tube | QFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | - | TO-3PN | - | 280W (Tc) | - | ||||
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FQB17P10TM | onsemi | MOSFET P-CH 100V 16.5A D2PAK | Na stanie4560 pcs | - | - | 100 V | 16.5A (Tc) | 190mOhm @ 8.25A, 10V | 4V @ 250µA | 39 nC @ 10 V | 1100 pF @ 25 V | - | 10V | ±30V | - | P-Channel | - | - | - | - | FQB1 | Tape & Reel (TR) | QFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D²PAK (TO-263) | - | 3.75W (Ta), 100W (Tc) | - | ||||
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FDS8874 | onsemi | MOSFET N-CH 30V 16A 8SOIC | Na stanie3690 pcs | - | - | 30 V | 16A (Ta) | 5.5mOhm @ 16A, 10V | 2.5V @ 250µA | 72 nC @ 10 V | 3990 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | FDS88 | Tape & Reel (TR) | PowerTrench® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 2.5W (Ta) | - | ||||
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IRFZ46NSTRLPBF | Infineon Technologies | MOSFET N-CH 55V 53A D2PAK | Na stanie20955 pcs | - | - | 55 V | 53A (Tc) | 16.5mOhm @ 28A, 10V | 4V @ 250µA | 72 nC @ 10 V | 1696 pF @ 25 V | - | 10V | ±20V | - | N-Channel | - | - | - | - | IRFZ46 | Tape & Reel (TR) | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | D2PAK | - | 3.8W (Ta), 107W (Tc) | - | ||||
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STP11NM65N | STMicroelectronics | MOSFET N-CH 650V 11A TO-220 | Na stanie26409 pcs | - | - | 650 V | 11A (Tc) | 455mOhm @ 5.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | 800 pF @ 50 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STP11N | Tube | MDmesh™ II | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 110W (Tc) | - | ||||
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FQPF8N90C | onsemi | MOSFET N-CH 900V 6.3A TO220F | Na stanie5120 pcs | - | - | 900 V | 6.3A (Tc) | 1.9Ohm @ 3.15A, 10V | 5V @ 250µA | 45 nC @ 10 V | 2080 pF @ 25 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | FQPF8 | Tube | QFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220F-3 | - | 60W (Tc) | - | ||||
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STP4N80K5 | STMicroelectronics | MOSFET N-CH 800V 3A TO220 | Na stanie55450 pcs | - | - | 800 V | 3A (Tc) | 2.5Ohm @ 1.5A, 10V | 5V @ 100µA | 10.5 nC @ 10 V | 175 pF @ 100 V | - | 10V | ±30V | - | N-Channel | - | - | - | - | STP4N80 | Tube | SuperMESH5™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | - | TO-220 | - | 60W (Tc) | - | ||||
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FQD13N06LTM | onsemi | MOSFET N-CH 60V 11A DPAK | Na stanie97280 pcs | - | - | 60 V | 11A (Tc) | 115mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4 nC @ 5 V | 350 pF @ 25 V | - | 5V, 10V | ±20V | - | N-Channel | - | - | - | - | FQD13N06 | Tape & Reel (TR) | QFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | TO-252AA | - | 2.5W (Ta), 28W (Tc) | - | ||||
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STF11N50M2 | STMicroelectronics | MOSFET N-CH 500V 8A TO220FP | Na stanie48770 pcs | - | - | 500 V | 8A (Tc) | 530mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | 395 pF @ 100 V | - | 10V | ±25V | - | N-Channel | - | - | - | - | STF11 | Tube | MDmesh™ II Plus | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | - | TO-220FP | - | 25W (Tc) | - | ||||
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SI3443DV | Infineon Technologies | MOSFET P-CH 20V 4.4A MICRO6 | Na stanie4040 pcs | - | - | 20 V | 4.4A (Ta) | 65mOhm @ 4.4A, 4.5V | 1.5V @ 250µA | 15 nC @ 4.5 V | 1079 pF @ 10 V | - | 2.5V, 4.5V | ±12V | - | P-Channel | - | - | - | - | - | Bulk | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | - | Micro6™(TSOP-6) | - | 2W (Ta) | - | ||||
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IPB05N03LA | Infineon Technologies | MOSFET N-CH 25V 80A TO263-3 | Na stanie3610 pcs | - | - | 25 V | 80A (Tc) | 4.6mOhm @ 55A, 10V | 2V @ 50µA | 25 nC @ 5 V | 3110 pF @ 15 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | IPB05N | Tape & Reel (TR) | OptiMOS™ | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | PG-TO263-3-2 | - | 94W (Tc) | - | ||||
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IRLL3303 | Infineon Technologies | MOSFET N-CH 30V 4.6A SOT223 | Na stanie3990 pcs | - | - | 30 V | 4.6A (Ta) | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50 nC @ 10 V | 840 pF @ 25 V | - | 4.5V, 10V | ±16V | - | N-Channel | - | - | - | - | - | Tube | HEXFET® | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | - | SOT-223 | - | 1W (Ta) | - | ||||
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IPP051N15N5AKSA1 | Infineon Technologies | MOSFET N-CH 150V 120A TO220-3 | Na stanie12093 pcs | - | - | 150 V | 120A (Tc) | 5.1mOhm @ 60A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | 7800 pF @ 75 V | - | 8V, 10V | ±20V | - | N-Channel | - | - | - | - | IPP051 | Tube | OptiMOS™ 5 | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | - | PG-TO220-3 | - | 500mW (Tc) | - | ||||
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NTMS7N03R2G | onsemi | MOSFET N-CH 30V 4.8A 8SOIC | Na stanie4510 pcs | - | - | 30 V | 4.8A (Ta) | 23mOhm @ 7A, 10V | 3V @ 250µA | 43 nC @ 10 V | 1190 pF @ 25 V | - | 4.5V, 10V | ±20V | - | N-Channel | - | - | - | - | NTMS7 | Tape & Reel (TR) | - | - | - | - | - | - | - | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | - | 8-SOIC | - | 800mW (Ta) | - |